Definition
A deep reactive ion etching method for silicon that alternates an etch step, commonly using SF6, with a fluorocarbon passivation step, commonly using C4F8, to produce deep anisotropic features.
Application
Used to form high-aspect-ratio silicon trenches, MEMS structures and through-silicon vias; the alternating cycles protect sidewalls while the feature bottom continues to etch.
Related search terms
Bosch DRIE; time-multiplexed DRIE
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Related concepts
Evidence and further reading
- Evidence from nist.govhttps://www.nist.gov/laboratories/tools-instruments/nanofab-tool-plasma-therm-corial-deep-silicon-etcher
- Evidence from nist.govhttps://www.nist.gov/system/files/documents/2017/05/09/Unaxis_ShuttlelineDSEII_DeepRIE_USERMANUAL_v1.pdf