Definition
A highly anisotropic plasma etch process used to form deep, steep-sided and often high-aspect-ratio features in silicon or other substrates. Common silicon implementations include cyclic Bosch etch/passivation and cryogenic processes.
Application
Used for through-silicon vias, MEMS cavities and trenches, microfluidic structures and other deep silicon features requiring vertical profiles, high selectivity and substantial etch depth.
Related search terms
Deep silicon etch; deep RIE
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Related concepts
Evidence and further reading
- Evidence from plasma.oxinst.comhttps://plasma.oxinst.com/products/dsie/
- Evidence from plasmatherm.comhttps://www.plasmatherm.com/process/etch/