Definition
In plasma etching, formation of an etch-inhibiting layer on feature sidewalls that suppresses lateral material removal and helps produce an anisotropic profile.
Application
Used in silicon deep reactive ion etching, including Bosch and cryogenic processes, to retain sidewall shape while forming deep holes and trenches.
Related concepts
Evidence and further reading
- Evidence from purdue.atlassian.nethttps://purdue.atlassian.net/wiki/spaces/BNCWiki/pages/6236414/ICP%2BRIE
- Evidence from plasma.oxinst.comhttps://plasma.oxinst.com/technologies/drie-new-template