Definition
A controlled condition in which the top surface of a copper pad is positioned slightly below the surrounding dielectric surface, typically by CMP, by a few nanometers.
Application
Used in hybrid bonding to create the surface topography needed for void-free dielectric contact before anneal; the copper later expands and forms the Cu-to-Cu connection. Excessive recess can weaken or prevent reliable bonding.
Related search terms
Cu pad recess; copper dishing for hybrid bonding
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Related concepts
Evidence and further reading
- Evidence from imec-int.comhttps://www.imec-int.com/en/articles/wafer-wafer-hybrid-bonding-pushing-boundaries-400nm-interconnect-pitch
- Evidence from appliedmaterials.comhttps://www.appliedmaterials.com/us/en/newsroom/blogs/why-the-world-needs-an-integrated-chiplet-to-wafer-hybrid-bonder.html