Definition
A III–V compound semiconductor with a direct bandgap and high electron mobility, enabling efficient light emission and high-frequency electronic operation.
Application
Used in RF/microwave ICs, optoelectronic emitters and detectors, and other high-speed or radiation-sensitive semiconductor applications.
Related search terms
Gallium Arsenide; GaAs
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Related concepts
Evidence and further reading
- Evidence from nist.govhttps://www.nist.gov/chips/macom-massachusetts-lowell
- Evidence from nist.govhttps://www.nist.gov/chips/intelliepi-texas-allen