Definition
A NAND-flash reliability effect in which repeated read operations can increase bit errors or alter cell threshold-voltage distributions in the accessed block.
Application
Managed with read-count, reclaim or refresh strategies and error-correction controls so accumulated read activity does not grow into uncorrectable stored-data errors.
Related search terms
NAND read disturb; Read-disturb error
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Related concepts
Evidence and further reading
- Evidence from sg.micron.comhttps://sg.micron.com/sales-support/sales/faqs
- Evidence from research.ibm.comhttps://research.ibm.com/publications/effect-of-read-disturb-on-incomplete-blocks-in-mlc-nand-flash-arrays