Definition
Positive bias temperature instability (PBTI) is a bias-temperature-instability aging mode affecting n-type MOS devices under positive gate bias, where electron trapping in high-k gate dielectrics is a primary reliability concern.
Application
Used in reliability evaluation of nMOS/high-k gate stacks because PBTI stress can produce threshold-voltage shift; reducing PBTI is therefore a gate-stack reliability target.
Related search terms
Positive BTI; Positive-bias temperature instability
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Related concepts
Evidence and further reading
- Evidence from imec-int.comhttps://www.imec-int.com/en/articles/novel-approach-improving-gate-stack-reliability
- Evidence from nist.govhttps://www.nist.gov/publications/device-level-jitter-probe-ultrafast-traps-high-k-mosfets