Definition
An ion-implantation effect in which incident ions enter open directions in a single-crystal lattice and penetrate deeper than the intended random-collision profile.
Application
Controlled because channeling can deepen and distort dopant profiles; mitigation methods include wafer tilt or rotation, screen oxide and pre-amorphization implants.
Related search terms
Ion channeling; implantation channeling
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Related concepts
Evidence and further reading
- Evidence from appliedmaterials.comhttps://www.appliedmaterials.com/in/en/glossary.html
- Evidence from appliedmaterials.comhttps://www.appliedmaterials.com/jp/ja/glossary.html