Definition
A pre-amorphization implant (PAI) is an ion implantation step performed before dopant implantation to create an amorphous near-surface semiconductor region.
Application
Used in shallow-junction processing to suppress crystal channeling during subsequent dopant implantation; silicon or germanium implants can be used to form the amorphized region before annealing and regrowth.
Related search terms
Pre-amorphization implantation; Preamorphization implant
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Related concepts
Evidence and further reading
- Evidence from nist.govhttps://www.nist.gov/publications/role-ge-cluster-formation-b-and-bf2-implanted-si-wafers-after-ge-pre-amorphization
- Evidence from web.stanford.eduhttps://web.stanford.edu/class/ee311/NOTES/ShallowJunctions.pdf