Furnace Anneal

04 Thermal Processing, Implant, Doping & Oxidation

Definition

A batch thermal treatment in which wafers are held at elevated temperature for a controlled time and ambient to activate dopants, repair implantation damage, drive diffusion, densify films, or modify interfaces.

Application

Used where longer thermal budgets and batch throughput are acceptable, including dopant activation, oxidation-related treatments, and film/interface conditioning.

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Furnace Anneal

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