Definition
The thickness of a dielectric film removed per unit time under specified etch conditions.
Application
Used to set etch time, throughput and process control for oxide, nitride, low-k and other dielectric patterning; the rate is evaluated together with selectivity, profile and uniformity and varies with plasma chemistry, power, pressure, material and feature geometry.
Related search terms
Dielectric removal rate; oxide etch rate (when oxide)
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Related concepts
Evidence and further reading
- Evidence from patents.google.comhttps://patents.google.com/patent/US6297163B1/en
- Evidence from www2.avs.orghttps://www2.avs.org/symposium2014/Papers/Paper_PS2-WeM2.html