Plasma Ashing

06 Plasma, Etch & Pattern Transfer

Definition

Plasma ashing is a dry-strip process that uses plasma-generated reactive species to remove photoresist and organic residues from semiconductor wafers.

Application

Used after lithography, etch, or implantation to remove resist/residues while preparing wafer surfaces for subsequent processing; chemistry and plasma conditions are selected for the material stack.

Related concepts

Evidence and further reading