Charge Trap

11 Memory Technologies

Definition

A localized electronic state in a semiconductor or dielectric that can capture and retain an electron or hole for a finite time; in charge-trap flash, engineered dielectric trapping sites intentionally store information.

Application

Used intentionally in modern 3D NAND charge-trap memory to store programmed charge, while unintended traps in gate dielectrics or interfaces can shift device characteristics, increase variability and contribute to reliability degradation.

Related search terms

Trapping state; charge-trapping site

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Related concepts

Evidence and further reading

  • Evidence from investors.micron.comhttps://investors.micron.com/news/press-release/2020/Micron-Ships-Worlds-First-176-Layer-NAND-Delivering-A-Breakthrough-in-Flash-Memory-Performance-and-Density-11-09-2020/default.aspx
  • Evidence from nist.govhttps://www.nist.gov/news-events/news/2021/10/nist-collaborators-develop-sensitive-new-way-detecting-transistor-defects