Definition
Unintended physical, chemical or electrical modification of a wafer, film, surface or interface caused by an etch process, including effects from energetic ions, charging, surface roughening or excessive material removal.
Application
A key constraint in plasma and advanced etch development; ion energy, chemistry, selectivity and atomic-scale removal are tuned to minimize damage that could degrade interfaces, gate dielectrics, carrier transport, leakage or device reliability.
Related search terms
Plasma etch damage; dry-etch damage
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Related concepts
Evidence and further reading
- Evidence from plasma.oxinst.comhttps://plasma.oxinst.com/technologies/icp-rie
- Evidence from newsroom.lamresearch.comhttps://newsroom.lamresearch.com/Tech-Brief-All-About-ALE