Definition
A method that uses the diffraction pattern produced by interference of scattered X-rays to investigate a material's atomic-scale structure.
Application
Used to measure strain in epitaxial silicon–germanium films on silicon, including semiconductor strain reference specimens.
Related concepts
Evidence and further reading
- Evidence from rigaku.comhttps://rigaku.com/products/x-ray-diffraction-and-scattering/xrd/learning/what-is-xrd
- Evidence from nist.govhttps://www.nist.gov/programs-projects/strain-measurement-semiconductor-devices