Definition
The gas pressure maintained inside a semiconductor process chamber during a fabrication step, set by the balance of gas inflow and vacuum pumping or throttle control.
Application
Used as a recipe variable in plasma etch, deposition and cleaning because pressure changes collision frequency, mean free path, plasma behavior and the transport of ions, radicals and byproducts to and from the wafer.
Related search terms
Process pressure; reactor pressure
Search phrases help you find this entry; their meaning depends on the context shown here.
Related concepts
Evidence and further reading
- Evidence from patents.google.comhttps://patents.google.com/patent/US20140342570A1/en
- Evidence from grizzle.robotics.umich.eduhttps://grizzle.robotics.umich.edu/files/Klimecky_JVSTA_wfigs.pdf