Definition
A dry, chemically driven surface-treatment process used to selectively remove a thin silicon-oxide layer, especially native oxide, without relying on a conventional liquid HF dip.
Application
Used immediately before contact-metal or silicide formation and other interface-sensitive steps so native oxide is removed while the wafer remains in an integrated or controlled environment, helping reduce contact resistance and interface contamination.
Related search terms
Chemical oxide removal; native oxide removal by COR
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Related concepts
Evidence and further reading
- Evidence from tel.comhttps://www.tel.com/product/certas_leaga.html
- Evidence from appliedmaterials.comhttps://www.appliedmaterials.com/us/en/semiconductor/products/create/metals-deposition.html