Definition
A group-V element commonly used as a donor dopant in silicon, where electrically active arsenic contributes electrons and can produce n-type conductivity when the donor contribution exceeds compensation by acceptors.
Application
Used in ion implantation and junction engineering for heavily doped n-type regions such as source/drain or contact regions, with dose and profile controlled through implantation and annealing.
Related search terms
Arsenic dopant
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Related concepts
Evidence and further reading
- Evidence from chu.berkeley.eduhttps://www.chu.berkeley.edu/wp-content/uploads/2020/01/Chenming-Hu_ch1-3.pdf
- Evidence from nist.govhttps://www.nist.gov/publications/high-precision-measurements-arsenic-implantation-dose-silicon-secondary-ion-mass