Definition
Field oxide is a relatively thick silicon-dioxide isolation region formed in non-active areas of a silicon device to electrically isolate neighboring devices and suppress parasitic conduction; historically it was commonly formed by local oxidation of silicon (LOCOS).
Application
In planar MOS processing, field oxide separated active transistor regions and reduced surface leakage or parasitic transistor action; modern scaled CMOS largely replaced LOCOS field oxide with shallow trench isolation.
Related search terms
FOX; LOCOS field oxide; isolation oxide
Search phrases help you find this entry; their meaning depends on the context shown here.
Related concepts
Evidence and further reading
- Evidence from tf.uni-kiel.dehttps://www.tf.uni-kiel.de/matwis/amat/elmat_en/kap_6/backbone/r6_2_2.html
- Evidence from halbleiter.orghttps://www.halbleiter.org/en/oxidation/locos/