Definition
The approximate electric-field strength at which a semiconductor material or device region can no longer sustain the field without rapid carrier multiplication or electrical breakdown.
Application
Used to compare power-semiconductor materials and design drift regions; wide-bandgap materials such as SiC and GaN have much higher critical fields than silicon, enabling thinner high-voltage structures.
Related search terms
Critical electric field; critical breakdown field
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Related concepts
Evidence and further reading
- Evidence from infineon.comhttps://www.infineon.com/dgdl/Infineon-CoolSiC_MOSFET_technology-Article-v01_00-EN.pdf?fileId=5546d4626d66c2b1016d6c4c5bdc407c
- Evidence from infineon.comhttps://www.infineon.com/product-information/gan-bandgap-what-it-is-and-why-it-matters