Definition
An ion-beam analysis method that records the energy and yield of ions backscattered from a sample to determine elemental composition and areal density, typically using high-energy helium ions.
Application
Measures composition and depth profiles in semiconductor thin films, including silicides and dielectric layers; film thickness can be inferred when film density is known or assumed.
Related search terms
Rutherford backscattering spectroscopy
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Related concepts
Evidence and further reading
- Evidence from eag.comhttps://www.eag.com/app-note/rutherford-backscattering-spectrometry-rbs-services/
- Evidence from nano.biu.ac.ilhttps://nano.biu.ac.il/rbs