Definition
Intentional control of mechanical stress in semiconductor structures to tailor device performance.
Application
In CMOS transistors, stressed capping layers and source/drain epitaxy can introduce channel strain to enhance carrier mobility.
Related concepts
Evidence and further reading
- Evidence from intel.comhttps://www.intel.com/pressroom/kits/advancedtech/doodle/ref_strain/strain.htm
- Evidence from iue.tuwien.ac.athttps://www.iue.tuwien.ac.at/pdf/ib_2007/CP2006_Ungersboeck_3.pdf