Definition
A plasma-etch profile defect in which localized excess etching forms narrow trenches near feature-bottom corners, often associated with ion or energetic-particle reflection and focusing from sidewalls.
Application
Monitored and minimized during anisotropic plasma etching because it can distort critical profiles, thin underlying layers, and degrade pattern-transfer fidelity.
Related search terms
micro-trenching
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Related concepts
Evidence and further reading
- Evidence from impact.ornl.govhttps://impact.ornl.gov/en/publications/study-on-mechanism-of-etching-in-low-pressure-radio-frequency-pla/
- Evidence from doi.orghttps://doi.org/10.1063/1.365674