Definition
A change in etch rate or profile with feature aspect ratio, commonly causing deep, narrow features to etch more slowly or differently because transport of reactive species and byproducts becomes constrained.
Application
Used as a key process-control consideration in high-aspect-ratio etching for 3D NAND, deep trenches, contacts and other structures where depth uniformity and profile control are critical.
Related search terms
Aspect-ratio-dependent etch; RIE lag (related effect)
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Related concepts
Evidence and further reading
- Evidence from newsroom.lamresearch.comhttps://newsroom.lamresearch.com/improving-uniformity-with-dummy-fill-semiverse-solutions
- Evidence from newsroom.lamresearch.comhttps://newsroom.lamresearch.com/Tech-Brief-All-About-ALE