Definition
Feature-dependent etch-rate variation in reactive ion etching, usually seen when narrow, higher-aspect-ratio features etch more slowly than wider features under the same process conditions.
Application
Characterized and reduced during etch-recipe development to limit depth differences between feature sizes, particularly in deep silicon etching for MEMS.
Related search terms
reactive ion etching lag; etch lag
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Related concepts
Evidence and further reading
- Evidence from arxiv.orghttps://arxiv.org/html/2104.02763v1
- Evidence from research.utwente.nlhttps://research.utwente.nl/en/publications/rie-lag-in-high-aspect-ratio-trench-etching-of-silicon/