Definition
Ion implantation performed with a deliberate non-normal incidence angle between the ion beam and wafer or device geometry.
Application
Used to place dopants into angled, sidewall, trench, or three-dimensional device regions and to control implant geometry; production implanters measure and control implant angle as a process parameter.
Related search terms
tilted implant; angled implant
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Related concepts
Evidence and further reading
- Evidence from appliedmaterials.comhttps://www.appliedmaterials.com/us/en/product-library/viista-900-3d.html
- Evidence from axcelis.comhttps://www.axcelis.com/products/purion-m-mid-current-ion-implantation/