Definition
In plasma processing, an electrical bias applied to the wafer electrode or substrate that changes the sheath potential and therefore the energy and directionality of ions striking the wafer.
Application
Used in plasma etch and related processes to tune ion bombardment, anisotropy, profile shape, selectivity and damage independently or semi-independently from plasma-generation conditions.
Related search terms
Substrate bias; wafer bias (plasma-processing context)
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Related concepts
Evidence and further reading
- Evidence from appliedmaterials.comhttps://www.appliedmaterials.com/jp/ja/semiconductor/products/processes/etch/sym3z-etch.html
- Evidence from newsroom.lamresearch.comhttps://newsroom.lamresearch.com/2007-08-20-Lam-Research-Corporation-Ships-First-300-mm-2300-R-Syndion-TM-System-for-3-D-IC-Through-Silicon-Via-Etch