Definition
A single-crystal growth method in which a seed crystal of the desired orientation contacts molten semiconductor material and is slowly pulled while rotating so the solidifying ingot follows the seed’s crystal orientation.
Application
Widely used to produce large-diameter monocrystalline silicon ingots for wafers; dopants can be added to the melt and pull, rotation and thermal conditions are controlled to set crystal diameter and material properties.
Related search terms
Czochralski process; CZ crystal growth
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Related concepts
Evidence and further reading
- Evidence from sumcosi.comhttps://www.sumcosi.com/english/products/process/
- Evidence from sumcousa.comhttps://www.sumcousa.com/spp-mfg/