Definition
An electrically insulating silicon-oxide layer located beneath the active silicon device layer in a silicon-on-insulator substrate, separating that layer from the underlying handle wafer.
Application
Used in SOI technologies to provide dielectric isolation, reduce parasitic capacitance and leakage paths, and improve electrostatic control in fully depleted and specialty devices.
Related search terms
Buried oxide layer; BOX layer
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Related concepts
Evidence and further reading
- Evidence from soitec.comhttps://www.soitec.com/home/group/corporate/newsroom/press-releases/2018/11/14/soitec-soi-wafers-at-the-heart-of-new-renesas-sotb%28tm%29-energy-harvesting-chipset
- Evidence from soitec.comhttps://www.soitec.com/docs/default-source/white-papers/white-paper-fd-substrates-v01b.pdf?sfvrsn=d5b4c3cd_5