Definition
The dimensional change introduced during pattern transfer from the lithographic mask or resist feature to the etched feature, expressed as the difference between the pre-etch patterned critical dimension and the resulting post-etch critical dimension; the sign convention must be stated when a numeric bias is reported.
Application
Used in lithography-to-etch process control, CD budgeting and model calibration to quantify lateral pattern-transfer error, tune etch recipes and compensate layouts or process targets for systematic CD change.
Related search terms
CD bias; pattern-transfer bias; etch CD bias
Search phrases help you find this entry; their meaning depends on the context shown here.
Related concepts
Evidence and further reading
- Evidence from patents.google.comhttps://patents.google.com/patent/EP1480085B1/en
- Evidence from lamresearch.comhttps://www.lamresearch.com/product/sense-i/