Definition
High-electric-field transport behavior in which the average drift speed of charge carriers approaches a limiting value instead of remaining proportional to field strength.
Application
Included in semiconductor device models to account for the reduction of MOSFET drain current relative to constant-mobility predictions.
Related concepts
Evidence and further reading
- Evidence from ocw.mit.eduhttps://ocw.mit.edu/courses/6-720j-integrated-microelectronic-devices-spring-2007/efaa0323526d20e958c404867053b5c1_lecture6.pdf
- Evidence from chu.berkeley.eduhttps://www.chu.berkeley.edu/wp-content/uploads/2020/01/Chenming-Hu_ch6-1.pdf