Definition
A dielectric failure process in which electrical insulation breaks down after a period of applied electrical stress.
Application
Time-to-breakdown measurements are used to assess the lifetime of gate and intermetal dielectrics in semiconductor devices.
Related concepts
Evidence and further reading
- Evidence from pptl.engr.wisc.eduhttps://pptl.engr.wisc.edu/images/publications/TDDB.pdf
- Evidence from nist.govhttps://www.nist.gov/publications/time-dependent-breakdown-ultra-thin-gate-dielectrics-under-pulsed-biased-stress