Definition
Plasma doping is a doping process that exposes a wafer to a dopant-containing plasma so ions can be incorporated into semiconductor structures, enabling low-energy and conformal implantation behavior.
Application
Used for high-dose, low-energy doping of planar and three-dimensional device structures such as FinFET, DRAM, and NAND features where directional beam implantation can be limiting.
Related search terms
PLAD; Plasma Immersion Ion Implantation (related)
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Related concepts
Evidence and further reading
- Evidence from ir.appliedmaterials.comhttps://ir.appliedmaterials.com/news-releases/news-release-details/applied-materials-unveils-breakthrough-technology-building-3d
- Evidence from ir.appliedmaterials.comhttps://ir.appliedmaterials.com/news-releases/news-release-details/applied-materials-teams-silicon-genesis-develop-plasma-implant