Definition
In ion implantation, the rate at which implant dose is delivered to the wafer, commonly described as ions per unit area per unit time and closely related to beam current and scan conditions.
Application
Used to control implant throughput and repeatability and to manage dose-rate-sensitive effects such as wafer heating, charging, accumulated implant damage and process response in high-current applications.
Related search terms
Implant dose rate; ion flux (area-normalized)
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Related concepts
Evidence and further reading
- Evidence from axcelis.comhttps://www.axcelis.com/wp-content/uploads/2023/08/Substrate-Condition-and-Metrology-Considerations-in-Poly-Gate-Doping-Implants.pdf
- Evidence from axcelis.comhttps://www.axcelis.com/products/purion-h-high-current-ion-implantation/