Definition
A high-electron-mobility transistor (HEMT) is a field-effect transistor that uses a semiconductor heterojunction to create a high-mobility carrier channel, commonly a two-dimensional electron gas.
Application
GaN and other HEMTs are used for high-frequency RF and high-power switching because the heterostructure channel can support high carrier mobility and strong electric-field performance.
Related search terms
high electron mobility transistor
Search phrases help you find this entry; their meaning depends on the context shown here.
Related concepts
Evidence and further reading
- Evidence from infineon.comhttps://www.infineon.com/product-information/gan-hemt-structure-architecture-physics-operation
- Evidence from infineon.comhttps://www.infineon.com/product-information/what-is-a-gan-fet-and-how-does-it-work