Definition
A conductive metallization barrier, commonly a refractory metal or metal nitride such as tantalum or tantalum nitride, placed at an interconnect interface to impede metal diffusion and stabilize the interface.
Application
Used in copper interconnect and advanced bonding structures to prevent copper migration into low-k or oxide dielectrics while supporting adhesion, reliability and subsequent seed or fill deposition.
Related search terms
Metal diffusion barrier; refractory-metal barrier
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Related concepts
Evidence and further reading
- Evidence from appliedmaterials.comhttps://www.appliedmaterials.com/us/en/blog/blog-posts/challenges-to-interconnect-scaling-at-3nm-and-beyond.html
- Evidence from imec-int.comhttps://www.imec-int.com/en/articles/wafer-wafer-hybrid-bonding-pushing-boundaries-400nm-interconnect-pitch