Definition
The controlled process chamber of an etch tool in which a wafer is exposed to selected gases, pressure, plasma or other reactive species and electrical conditions so material can be removed from targeted wafer regions.
Application
Used for conductor, dielectric and other dry-etch steps; chamber geometry, plasma generation, gas delivery, pressure control, wafer temperature and surface condition all contribute to etch rate, profile, uniformity and repeatability.
Related search terms
Plasma etch chamber; etch process chamber
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Related concepts
Evidence and further reading
- Evidence from appliedmaterials.comhttps://www.appliedmaterials.com/us/en/semiconductor/products/processes/etch.html
- Evidence from lamresearch.comhttps://www.lamresearch.com/product/sense-i/