Definition
Dependence of etch rate, depth, or profile on local pattern density or feature environment, arising from effects such as reactant depletion and transport limitations.
Application
Used in plasma-etch process development and layout/process compensation to control within-wafer and pattern-dependent etch nonuniformity.
Related search terms
etch loading; microloading
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Related concepts
Evidence and further reading
- Evidence from semiengineering.comhttps://semiengineering.com/using-dummy-patterning-to-solve-etch-uniformity-problems/
- Evidence from doi.orghttps://doi.org/10.1021/acsaelm.4c01462